Identification of Microscopic Hole-Trapping Mechanisms in Nitride Semiconductors

Polarons in Wurtzite Nitride Semiconductors

Polaron binding energy and effective mass are calculated for semiconductors with wurtzite crystalline structure from the first order electron-phonon corrections to the self-energy. A recently introduced Fröhlich-like electron-phonon interaction Hamiltonian which accounts for the LO and TO polarizations mixing due to the anisotropy is used in the calculation. The polaronic damping rates are eval...

Effects of hole localization on limiting p-type conductivity in oxide and nitride semiconductors

Articles you may be interested in Origin of subgap states in amorphous In-Ga-Zn-O A pathway to p-type wide-band-gap semiconductors Appl. We examine how hole localization limits the effectiveness of substitutional acceptors in oxide and nitride semiconductors and explain why p-type doping of these materials has proven so difficult. Using hybrid density functional calculations, we find that anion...

Nanosphere Lithography for Nitride Semiconductors

Effect of Hole Trapping on the Microscopic Structure of Oxygen Vacancy Sites in a-SiO2

In order to develop an improved fundamental understanding of the microscopic effects of hole trapping by oxygen vacancy sites (VO) in amorphous a-SiO2, we have performed ab initio Hartree-Fock calculations of the structure and energy of model silicon dioxide clusters. Three different precursor clusters were employed in these calculations: (A) a 15 atom cluster without rings; (B) a 39 atom clust...

Inter-valence-band hole-hole scattering in cubic semiconductors

Transitions between valence subbands resulting from hole-hole scattering in cubic semiconductors have been analyzed in the frame of Coulomb interaction of valence electrons in the Luttinger-Kohn representation. Expressions for transition rates are derived. Calculated rates for transitions between lightand heavy-hole bands are presented for germanium. Hole-hole scattering has remarkably differen...